Articles you may be interested inNanostructuring of free-standing, dielectric membranes using electron-beam lithography J. Vac. Sci. Technol. B 31, 06F402 (2013); 10.1116/1.4820019 Advanced photolithographic mask repair using electron beams J. Vac. Sci. Technol. B 23, 3101 (2005); 10.1116/1.2062428High-speed and high-precision deflectors applied in electron beam lithography system based on scanning electron microscopy In situ electron-beam lithography on GaAs substrates using a metal alkoxide resist High-resolution electron-beam-assisted deposition and etching is an enabling technology for current and future generation photomask repair. NaWoTec in collaboration with Carl Zeiss NTS (formerly LEO Electron Microscopy) has developed a mask repair tool capable of processing a wide variety of mask types, such as quartz binary masks, phase shift masks, extreme ultraviolet masks, and e-beam projection stencil masks. Specifications currently meet the 65 nm device node requirements, and tool performance is extendible to 45 nm and below. The tool combines LEO's ultra-high-resolution Supra scanning electron microscope platform with NaWoTec's proprietary e-beam deposition and etching technology, gas delivery system, and mask repair software. In this article, we focus on tool performance results; that is, the reproducibility and accuracy of repair of clear and opaque programmed defects on Cr binary and MoSi phase shift masks. These masks have in the past been difficult to repair due to beam position instability caused by charging of the insulating quartz areas. We have found and implemented a solution to this charging problem and have demonstrated in spec repair of various defect types. The extendibility of e-beam-based repair technology to future lithography nodes, both in terms of the required resolution and the ability to repair next generation lithography mask types, will also be addressed.

Fabrication of planar quantum magnetic disk structure using electron beam lithography, reactive ion etching, and chemical mechanical polishing J. Vac. Sci. Technol. B 13, 2850 (1995 10.1116/1.588303 Nanometer-scale pattern formation of GaAs by in situ electron-beam lithography using surface oxide layer as a resist film Variable shaped electron-beam lithography application to subwavelength and computer generated diffractive optics fabrication Use of electron beam lithography to selectively decompose metalorganics into patterned thin-film superconductors Appl. Phys. Lett. 53, 526 (1988);A vector scan pattern generator, optimized for smooth curvilinear as well as rectilinear primitive shapes, has been designed and constructed. The pattern generator uses high-speed hardware to implement a set of second-order, quadratic equations to drive digital to analog converters and high-speed array processors to calculate the coefficients for these equations. The digital pattern generator package contains the high-speed digital, analog, and high-resolution analog electronics. The initial lithography results confirm the operation of the system and stepping rates of 40 MHz have been achieved.

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