Recent advances in the phosphors used for field emission displays (FEDs) are discussed. After reviewing the range of voltages and phosphors being used in first generation devices, the improved properties of future generation phosphors are reviewed. Specifically, next generation displays will require better low voltage efficiencies, chromaticity, saturation behavior, and maintenance. Possible routes to achieve these improvements are discussed. The improved understanding of the role of charging and surface recombination effects on cathodoluminescent intensity and efficiency is reviewed. An improved understanding of electron beam-stimulated surface chemical reaction effects on the degradation of phosphor is presented. It is concluded that recent research efforts have created a new level of understanding of FED phosphors, and this should lead to the necessary improvements in properties.

Degradation of ZnS and Y2O2S cathodoluminescent (CL) phosphors has been studied at 1–4 keV using Auger electron spectroscopy simultaneous with CL. The data are consistent with an electron stimulated surface chemical reaction (ESSCR) which led to destruction of ZnS and formation of a surface nonluminescent ZnO layer as well as injection of oxygen point defects into the near-surface region. In the case of Y2O2S:Eu, the electron beam stimulated removal of S and formation of Y2O3:Eu in the presence of 1×10−6 Torr of oxygen. A model is presented which predicts that degradation by the ESSCR should increase with pressure in the vacuum, depend exponentially on electron dose, increase as the primary beam energy was reduced below 4 keV, and depend upon the type of gas present in the vacuum. These trends were demonstrated from the experimental data.

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The first vacuum-ultraviolet spectrum of a polysilylene (chain-type polysilane) with aromatic substituents is presented. Assignments of the absorption bands of the model compound poly(methylphenylsilylene) are based on previous experimental data and theoretical electronic band structure calculations for poly(alkylsilylenes) and on ultraviolet spectra of phenyl-containing monomers and polymers. Although aryl orbitals mix with the sigma-conjugated orbitals located along the catenated silicon backbone, some transitions are largely localized on the phenyl groups. These assignments elucidate the nature of the bonding in polysilylenes and should be useful in understanding photodegradation mechanisms and in the design of related new optical materials.

Determination of the radiation response of doped-fiber laser materials, systems and components to relevant ionizing radiation fluxes is central to the prediction of long-term fiber-based laser performance/survivability in adverse and/or space-based environments. It is well known that optical elements that are placed into orbit around the Earth experience harsh radiation environments that originate from trapped-particle belts, cosmic rays, and solar events. Of particular interest to optical materials is the continuous flux of gamma photons that the materials encounter. Such radiation exposure commonly leads to the formation of color centers in a broad range of optical materials. Such color center formation gives rise to changes in optical transmission, loss and luminescent band structure, and, thus, impacts long-term optical device performance.In this paper we will present the results of our investigation of gamma-radiation-induced photodarkening on the passive optical transmittance of a number of ytterbium-(Yb-) doped optical fibers. We will discuss the evolution of the optical response of the fiber across the 1.0 to 1.6 micron wavelength window with increasing gamma exposure. Results indicate that these fibers exhibit reasonable radiation resistance to gamma exposures typical of a 5-year, low-earth-orbit environment. Maximum transmittance losses of less than 10% were observed for total gamma exposures of 2-5 krad (Si).