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Variation analysis of n-MOSFETs fabricated by different manufacturers at three technology nodes (180, 100, and 65 nm) demonstrates that surface-potential compact models are capable to bridge the gap between circuit simulation and TCAD by enabling extraction of microscopic MOSFET-parameter variation from measured macroscopic V th and I on variations. Considering only the four microscopic variations of substrate doping, pocket-implantation doping, carrier mobility degradation due to gate-interface roughness, and channel-length change, is found sufficient to reproduce within-wafer V th and I on variations of wide MOSFETs (W g = 10 μm) for all L g and all three technology nodes. Extracted microscopic variation reductions between 180-and 65-nm nodes range from 25% for pocket doping to 70% for carrier mobility degradation. However, V th and I on variations at shortest L g remain approximately constant for all three technologies, in spite of the substantial variation reductions at the microscopic level.

A pulsed glow discharge is used for sputtering in the presence of a gas flow to form a metal vapour jet suitable for use in a room-temperature metal vapour laser. It is found that the sputtering process is most efficient during the first 50 ps of the discharge pulse. Switching the discharge in the burst mode with a pulse duration of about 15 ps and an interpulse delay of about 18 ps achieves similar metal vapour concentrations in the jet to that attained by steady-pulse sputtering, but requires only half the total discharge energy.

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