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In recent years, the development of new semiconductor materials has brought opportunities and challenges to technological innovation and the development of emerging industries. Among them, cadmium zinc telluride material have highlighted important application prospects due to their excellent properties. CdZnTe as the third-generation cutting-edge strategic semiconductor material, has the advantages of high detection efficiency, low dark current, strong portability, and can be used at room temperature without additional cooling system. However, when the cadmium zinc telluride detector is exposed to radiation environment for a long time, it will cause different degrees of radiation damage, which will affect the performance of the device or even fail, and greatly shorten the service time of the detector in the radiation field. The transport process of 1-14 MeV neutrons in CdZnTe material was simulated to obtain the information of the primary knock-on atoms, and then combined with the cascade collision model, the irradiation of neutrons with different energies in CdZnTe material was analyzed. The damage is simulated and calculated. The calculation results show that most of the primary knock-on atoms energy is located at the low-energy end, and with the increase of the incident neutron energy, the types of primary knock-on atoms are more abundant, and the energy also increases gradually; neutron irradiation of CdZnTe The non-ionizing energy loss is uniformly distributed along the depth direction in the material, and the non-ionizing energy loss first increases and then decreases with the increase of the incident neutron energy; the calculation results of dpa show that the dpa also increases first with the increase of the incident neutron energy. And further analysis shows that the number of Te and Zn displacement atom atoms increases first and then decreases with the increase of incident neutron energy, while the number of Cd displacement atoms increases with the increase of incident neutron energy, which is co-modulated by its inelastic scattering cross-section and other nuclear-like reaction cross-sections. The comprehensive analysis shows that with the increase of the incident neutron energy, inelastic scattering becomes the main factor causing the internal displacement damage of the material.

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The rapid development of the aerospace and nuclear industries is accompanied by increased exposure to highenergy ionising radiation. Thus, the performance of radiation shielding materials needs to be improved to extend the service life of detectors and ensure the safety of personnel. The development of novel lightweight materials with high electron density has therefore become urgent to alleviate radiation risks. In this work, new MAPbI 3 /epoxy (CH 3 NH 3 PbI 3 /epoxy) composites were prepared via a crystal plane engineering strategy. These composites delivered excellent radiation shielding performance against 59.5 keV gamma rays. A high linear attenuation coefficient (1.887 cm −1 ) and mass attenuation coefficient (1.352 cm 2 g −1 ) were achieved for a representative MAPbI 3 /epoxy composite, which was 10 times higher than that of the epoxy. Theoretical calculations indicate that the electron density of MAPbI 3 /epoxy composites significantly increases when the content ratio of the (110) plane in MAPbI 3 increases. As a result, the chances of collision between the incident gamma rays and electrons in the MAPbI 3 /epoxy composites were enhanced. The present work provides a novel strategy for designing and developing high-efficiency radiation shielding materials.