This paper presents the design, fabrication and characterization of a silicon dioxide piezoresistive microcantilever immunosensor fabricated on silicon-on-insulator (SOI) wafers. The microcantilever consists of two strips of single crystalline silicon piezoresistors sandwiched in between two silicon dioxide layers. A theoretical model for the laminated microcantilever with a discontinuous layer is deduced using classic laminated beam theory. A two-step release method combining anisotropic and isotropic etching is developed to suspend the microcantilever, and the fabrication results show an excellent yield. The residual stress-induced free bending of the microcantilever and the stress caused by self-heating of the piezoresistors are discussed. The microcantilever sensor is characterized as an immunosensor using specific binding of antigen and antibody. These methods and some conclusions are also applicable to the development of other piezoresistive sensors that use laminated structures.
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