Some of differences in nonverbal communication styles in the Anglo and Latino cultures are examined, with attention given to some of the misunderstandings that can result. The treatment covers proxemics (distance), kinesics (gestures and facial expressions), and oculesics. The importance of studying one's own culture as a way of becoming aware of these cultural differences is stressed. A heightened awareness of the differences can be extremely important to anyone who wants to be effective in a diverse work environment.In every social encounter, nearly twothirds of the meaning in the interaction is conveyed in nonverbal ways, according to such experts in the area of nonverbal communication as Ray L. Birdwhistle and A. Mehrabian. Nonverbal communication is defined as the nonlinguistic messages that are consciously or unconsciously encoded and decoded through such means as facial expressions, body gestures (kinesics), space (proxemics), touch (haptics), eye contact (oculesics), time (chronemics), tone (paralinguistics), and

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This paper describes an experimental comparative study of the matching between conventional (rectangular gate shape) and Diamond (hexagonal gate geometry) n-channel Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), which were manufactured in an 130 nm Silicon-Germanium Bulk Complementary MOS (CMOS) technology and exposed to different X-rays Total Ionizing Doses (TIDs). The results indicate that the Diamond layout style with alpha () angle equal to 90˚ for MOSFETs is capable of boosting the device matching by at least 17% regarding the electrical pa-rameters studied (Threshold Voltage and Subthreshold Slope) as compared with the conventional MOSFET counterparts, considering that they present the same gate area, channel width, bias conditions and for the same TID. This is due to the Longitudinal Corner Effect (LCE). Parallel MOSFETs with Different Channel Length Effect (PAMDLE) and Deactivation of Parasitic MOSFETs in the Bird’s Beak Regions Effect (DEPAMBBRE) present in the structure of Diamond MOSFETs. Therefore, the Diamond layout style can be consid-ered an alternative hardness-by-design (HBD) layout strategy to boost the electrical performance and TID tolerance of MOSFETs enabling analog or radio-frequency CMOS inte-grated circuits (ICs) applications.

Simulation results of channel parameters using a Game Engine Ray Based Tool in different operating systems with different hardware architectures and using an open source 3D modeling tool for an indoor scenario are presented in this paper. We present simulation results and compare them with a set of measurements for an indoor scenario in the 5.4 GHz band, obtaining good matches between the rays traced by the tool and measurements for delay spread.

This paper aims to experimentally study the influence of the ellipsoidal layout style in MOSFETs in comparison to the standard MOSFETs (rectangular gate shape) regarding the 180 nm CMOS ICs Manufacturing Process from TSMC. The obtained results show that the electrical performance of the main electrical parameters and figures of merit of the Ellipsoidal MOSFETs are further improved when we compare with those observed regarding technological nodes less sophisticated due to the innovative effects (LCE and PAMDLE) that occur simultaneously in this innovative MOSFET structure.