We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires via a gold catalyst particle. We demonstrate this by synthesizing axial pn-junctions, chemically etching them, and fabricating electrical contacts in a vertical configuration. Electrical measurements show clear diode behavior. Control of dopant incorporation is crucial for future applications and will eventually lead to full freedom of design.

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We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial heterostructures to optimize device performance. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with X-ray diffraction pole figures and cross-sectional transmission electron microscopy. In addition, e-beam lithography was used to predefine the position of the nanowires. Finally, the synthesis of heterostructured nanowires is discussed.