Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures

We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires via a gold catalyst particle. We demonstrate this by synthesizing axial pn-junctions, chemically etching them, and fabricating electrical contacts in a vertical configuration. Electrical measurements show clear diode behavior. Control of dopant incorporation is crucial for future applications and will eventually lead to full freedom of design.