Zinc Incorporation via the Vapor−Liquid−Solid Mechanism into InP Nanowires

Abstract

We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires via a gold catalyst particle. We demonstrate this by synthesizing axial pn-junctions, chemically etching them, and fabricating electrical contacts in a vertical configuration. Electrical measurements show clear diode behavior. Control of dopant incorporation is crucial for future applications and will eventually lead to full freedom of design.

Growth of doped InAsyP1−y nanowires with InP shells

“…Hydrogen sulfide (H 2 S) has been used for n-type doping [5,22] and diethyl zinc (DEZn) has been used for p-type doping [17] of InP NWs. We therefore investigated the doping of InAsP NW using these precursors.…”

Doping profile of InP nanowires directly imaged by photoemission electron microscopy

“…We propose that different diffusion lengths of dopant atoms or H 2 S molecules on the intrinsic segment as compared to the n-doped segments could lead to a different abundance of dopants atoms available for the growth of the two segments although gas pressures were the same. The n-type and intrinsic have different crystal structures, 19,20 which has shown to affect diffusion length. 21 Note that the two n-segments had the same growth rate.…”

VLS Growth of Position-controlled InP Nanowires and Formation of Radial Heterostructures on Mask-patterned InP Substrates

“…The PH 3 flow rate was fixed at 155 ccm. In order to enhance the formation of the WZ crystal phase, S-doping by H 2 S gas was introduced during the NW growth [13]. For controlling the shape of NWs, introduction of HCl gas during the NW growth was investigated.…”