No abstract

No abstract

AbstractsHigh-k/metal gate (HKMG) compatible high performance Source/Drain (S/D) stress-memorization-technology (SMT) is presented. Channel stress generated by SMT can be simulated by using mask-edge dislocation model, which is consistent with the measured actual channel stress. Extremely deep pre-amorphization-implant (PAI) for SMT creates multiple mask-edge dislocations under S/D region, which enhances short-channel mobility by 40~60%. Finally, more than 10% short channel drive current gain is achieved with additional S/D extension optimization.

No abstract

Low-energy electron diffraction I/V analyses reveal that Mn thin films deposited on Ag͑001͒ at room temperature form substitutional, ordered, bilayer Mn 50 Ag 50 surface alloys. The Mn atoms in this structure have local magnetic moments of considerable value, as judged from the Mn 3s core level spectra; these local magnetic moments of Mn are effective in the formation of the ordered surface alloy. Ab initio total energy calculations have been done and the results confirmed the experimental observations.