Texture analysis of damascene-fabricated Cu lines by x-ray diffraction and electron backscatter diffraction and its impact on electromigration performance Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10-20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure by electromigration.

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