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A comparative study on the strain relief behaviour of epitaxially grown InxGal _,,As (where 0.1 < x< 1) alloys on GaAs (00 1) and (1 10) were carried out using transmission electron microscopy (TEM) and high resolution X-ray diffraction (XRD). Three different strain relief mechanisms related to the formation of misfit dislocations (MDs) were observed. The dominant strain relief process can be a single mechanism or a combination of two of the three mechanisms depending on the substrate orientation and the In content.

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The strain relaxation of In0.1Ga0.9As layers on GaAs (110) was studied by transmission electron microscopy (TEM) and x-ray diffraction. TEM observation showed that strain relief in the (110) interface is initially dominated in the [001] direction by the formation of 60° type dislocations and stacking faults via {111}〈011〉 slip systems for layer thicknesses up to approximately 200 nm. As the layer thickness increases, {113}〈011〉 slip systems became active and the resultant misfit dislocations contribute strain relief in both [001] and [11̄0] directions. The efficiency of strain relief by the different misfit dislocations is discussed.