The strain relaxation of In0.1Ga0.9As on GaAs (110) grown by molecular beam epitaxy

Abstract

The strain relaxation of In0.1Ga0.9As layers on GaAs (110) was studied by transmission electron microscopy (TEM) and x-ray diffraction. TEM observation showed that strain relief in the (110) interface is initially dominated in the [001] direction by the formation of 60° type dislocations and stacking faults via {111}〈011〉 slip systems for layer thicknesses up to approximately 200 nm. As the layer thickness increases, {113}〈011〉 slip systems became active and the resultant misfit dislocations contribute strain relief in both [001] and [11̄0] directions. The efficiency of strain relief by the different misfit dislocations is discussed.

Spin transport and spin manipulation in GaAs (110) and (111) quantum wells

“…During the hetero‐epitaxial growth required for the fabrication of QW structures on GaAs(110), effective strain relaxation by dislocations moving on slip planes is restricted to the [001] direction. In contrast, this mechanism is possible along both orthogonal surface directions of hetero‐epitaxial layers grown on GaAs(001) (). Furthermore, the elastic properties of GaAs(110) and GaAs(001) are different, resulting in a strongly reduced critical thickness for hetero‐epitaxial growth on GaAs(110) compared to growth on GaAs(001) ().…”

A comparison of strain relief behaviour of In x Ga1? x As alloy on GaAs (001) and (110) substrates

“…The angle between their u and b makes them 73" type MDs. The geometry of u and b implies that they are caused by slip on the inclined (1 3 1) planes which intersect along (1 f 2) directions in the (1 1 0) interface [8], as shown schematically in Fig. 7.…”

“…The results which we discuss in this paper have been obtained by growing layers of various compositions (x) and layer thicknesses (t) of In~Gal_xAs on both (001) and (1 10) surfaces of GaAs under identical growth conditions with substrate temperatures in the range 420~80 °C and group III:V flux ratio between 1 : 4 and 1 : 10 [4,8,11]. The list of samples examined in our study is given in Table I.…”

(Invited) Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunities

“…We found the preferential propagation of misfit dislocations along the [1 _ 10] direction. This anisotropic strain relaxation is attributed to the introduction of two types of misfit dislocations, those are 60° and 73° dislocations (12). 60° dislocations along the [1 2] directions are also introduced, however the density of 73° dislocation is lower than that of 60° dislocation.…”