No abstract

Graphene-based metamaterials have been theoretically demonstrated as an enabler for applications as perfect absorbers, photodetectors, light emitters, modulators, and tunable spintronic devices. However, challenges associated with conventional film deposition techniques have made the multilayered metamaterial difficult to fabricate, which have severely limited experimental validations. Herein, the experimental demonstration of the phototunable graphene-based multilayered metamaterials on diverse substrates by a transfer-free, solution-phase deposition method is presented. The optical properties of the metamaterials are tuned dynamically by controllable laser-mediated conversion from graphene oxide layers into graphene counterparts, which exhibit different degrees of conversion, which would offer huge potential for devices design and fabrication. The converted graphene layers present comparable (within 10%) optical conductivity to their chemical vapor deposited analogues. Moreover, laser patterning leads to functional photonic devices such as ultrathin flat lenses embedded in the lab-on-chip device, which maintains consistency and exhibits subwavelength focusing resolution in aqueous environments without any noticeable degradation compared with the original lens. This graphene-based metamaterial provides a new experimental platform for broad applications in on-chip integrated photonic, biomedical, and microfluidic devices.

High-quality continuous (GO) thin films are prepared by a self-assembly method. Z-scan measurements during the laser-induced reduction process unveil in situ nonlinear responses in the GO film. Third-order nonlinear responses of the GO film can be tuned dynamically by varying the laser input fluence. GO thin films with tunable nonlinear responses and versatile patterning opportunities by using direct laser writing may serve as promising solid-state materials for novel nonlinear functional devices.

Nanometric flat lenses with three-dimensional subwavelength focusing are indispensable in miniaturized optical systems. However, they are fundamentally challenging to achieve because of the difficulties in accurately controlling the optical wavefront by a film with nanometric thickness. Based on the unique and giant refractive index and absorption modulations of the sprayable graphene oxide thin film during its laser reduction process, we demonstrate a graphene oxide ultrathin (∼200 nm) flat lens that shows far-field three-dimensional subwavelength focusing (λ3/5) with an absolute focusing efficiency of >32% for a broad wavelength range from 400 to 1,500 nm. Our flexible graphene oxide lenses are mechanically robust and maintain excellent focusing properties under high stress. The simple and scalable fabrication approach enables wide potential applications in on-chip nanophotonics. The wavefront shaping concept opens up new avenues for easily accessible, highly precise and efficient optical beam manipulations with a flexible and integratable planar graphene oxide ultrathin film.

Two-dimensional semiconductors, such as molybdenum disulfide (MoS2), exhibit a variety of properties that could be useful in the development of novel electronic devices. However, nanopatterning metal electrodes on such atomic layers, which is typically achieved using electron beam lithography, is currently problematic, leading to non-ohmic contacts and high Schottky barriers. Here, we show that thermal scanning probe lithography can be used to pattern metal electrodes with high reproducibility, sub-10 nm resolution, and high throughput (10 5 μm 2 /h per single probe). The approach, which offers simultaneous in situ imaging and patterning, does not require a vacuum, high energy, or charged beams, in contrast to electron beam lithography. Using this technique, we pattern metal electrodes in direct contact with monolayer MoS2 for top-gate and back-gate field-effect transistors.These devices exhibit vanishing Schottky barrier heights (around 0 meV), on/off ratios of 10 10 , no hysteresis, and subthreshold swings as low as 64 mV/dec without using negative capacitors or hetero-stacks.