The influence of poly(acrylonitrile–butadiene–styrene) (ABS) as a special β-nucleating agent on the impact and tensile properties of isotactic polypropylene (iPP) were investigated by dynamic rheological measurements, wide-angle X-ray diffraction (WAXD), differential scanning calorimetry (DSC), scanning electron microscopy (SEM), and mechanical properties tests. It is found that the β nucleation efficiency of ABS is closely related to its concentration, dispersibility, and molding method for the iPP/ABS blends. The content of β-crystal (Kβ) rises with the incorporation of ABS and shows a maximum with the introduction of 1% ABS for compression-molded blends and 2% ABS for injection-molded blends, respectively, which is followed by a decrease in Kβ. The addition of a small amount of ABS has a significant reinforcing and toughening effect on iPP. Compared with the compression-molded samples, the ABS dispersed phase in injection-molded samples has a smaller particle size and a larger specific surface area, which are favorable for stress transmission and higher β nucleation efficiency, and therefore, better tensile and impact properties can be expected.
One-dimensional nanostructured SnO2 has attracted intense research interest due to its advantageous properties, including a large surface-to-volume ratio, high optical transparency and typical n-type properties. However, how to fabricate high-performance and multifunctional electronic devices based on 1D nanostructured SnO2 via low-cost and efficient preparation techniques is still a huge challenge. In this work, a low-cost, one-step electrospun technology was employed to synthesize the SnO2 nanofiber (NF) and nanotube (NT) arrays. The electrical and photoelectrical parameters of SnO2 NTs-based devices were effectively controlled through simple changes to the amount of Sn in the precursor solution. The optimal 0.2 SnO2 NTs-based field effect transistors (FETs) with 0.2 g SnCl2*4H2O per 5 ml in the precursor solution exhibit a high saturation current (∼9 × 10−5 A) and a large on/off ratio exceeding 2.4 × 106. Additionally, 0.2 SnO2 NTs-based FET also exhibit a narrowband deep-UV photodetectivity (240–320 nm), including an ultra-high photocurrent of 307 μA, a high photosensitivity of 2003, responsibility of 214 A W−1 and detectivity of 2.19 × 1013 Jones. Furthermore, the SnO2 NTs-based transparent photodetectors were as well be integrated with fluorine-doped tin oxide glass and demonstrated a high optical transparency and photosensitivity (∼199). All these results elucidate the significant advantages of these electrospun SnO2 NTs for next-generation multifunctional electronics and transparent photonics.
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