High-performance field effect transistors based on large ratio metal (Al、Ga、Cr) doped In2O3 nanofibers

Effect of Composition and Structure of Metal Oxide Composites Nanostructured on Their Conductive and Sensory Properties

“…Thus, the quantity E MO increases as a result of the compression of the crystal lattice observed upon partial (in the concentration range 0-15 wt %) substitution of In 3+ ions (radius 0.80 Å) by the smaller Al 3+ (radius 0.54 Å) during the formation of the In 2 O 3 -Al 2 O 3 composite [36]. This leads to a decrease in the total concentration of oxygen vacancies in the bulk and on the surface and, accordingly, in conduction electrons in nanocrystals of the composite [37]. It was found by photoluminescence that the concentration of oxygen vacancies also decreases as a result of the compression of the lattice of SnO 2 nanocrystals when doped with Ti 4+ ions (radius 0.64 Å) [38].…”

“…Investigation of sensory systems based on oxides such as SnO 2 [35,66,67], In 2 O 3 [35][36][37][68][69][70][71][72], ZnO [73], and Co 3 O 4 [70][71][72]74] doped with various ions showed that the dependence of the sensory effect on the concentration of different types of doping ions has the same form as the dependence of the amount of chemisorbed oxygen.…”

A Short Review on Various Engineering Applications of Electrospun One-Dimensional Metal Oxides

“…Due to their unique optical, electrical and magnetic properties, they are used in modern devices such as field-effect transistors (FETs) and microwave absorption materials. X. Zhu et al presented [ 168 ] a method to fabricate high-performance field-effect transistors based on electrospun In 2 O 3 nanofibers admixed with Al, Ga and Cr. The devices showed optimal performance at a 10% molar concentration of admixing material (Al, Cr and Ga): low and positive gate-source voltage V GS (<6.0 V), a high ratio of the transistor on current to transistor off current I on /I off (~108), high saturation current (~10–4 A) and carrier mobility on the level of ~2.0 cm 2 /V −1 s −1 .…”

Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

“…Transparent metal-oxide (MO) thin films have been extensively explored as fundamental building blocks for the next generation of electronic and optic devices due to their outstanding electrical performance, high optical transparency and environmental stability. [1][2][3][4][5][6] Various deposition techniques have been developed to prepare high-quality MO films. The market is currently dominated by vacuum-based techniques (physical vapor deposition and chemical vapor deposition), [7][8] followed by chemical-solution-deposition (CSD)-based deposition techniques, such as spray, 1 spin or dip coating [9][10][11] and inkjet printing [12][13][14] .…”