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The effects of water vapor treatment (WVT) on a Ge substrate were investigated in order to understand the improved electrical properties of Pt/HfO2/Ge metal-oxide-semiconductor (MOS) capacitors. The WVT and HfO2 deposition were performed in situ using an atomic layer deposition technique to avoid air exposure. As a result, the WVT on cleaned Ge substrates reduced the native oxide effectively and enhanced the initial growth of the HfO2 film. The improved interface qualities with WVT enhanced Ge-based device performance through a smoother capacitance-voltage curve, less increase in the inversion capacitance, and lower density of interface states.

Nanodomain structure of the complex thin films consisted of HC (Hydrocarbons) and FC (Fluorocarbons) was investigated using AFM (Atomic Force Microscope) and the current flowin through the electron detected by STM (Scanning Tunneling Microscope). The corn lex thin films consisted of arachidic acid and perfluorodecanoic acid were fa E ricated by LB (Langmuir-Blodgett) technique with the various conditions (i.e. pH, molar ratio, and counterion). The molecular array composed of viologen (electron acceptor), flavin (sensitizer), and ferrocene (electron donor) was aligned by LB techni ue onto HC-FC mixed thin films deposited under the optimal investigated to provide the possibility of molecular device design.transfer molecules subsequently deposited on the H 8 -FC nanodomain was condition. 9r he molecular array deposited onto nanodomain structure was