No abstract

No abstract

In situ B-doped Si epitaxial growth by atmospheric-pressure plasma chemical vapor deposition (AP-PCVD) using porous carbon electrode was investigated. Heavy B doping for a carrier concentration of 8×10 19 cm −3 was achieved using B 2 H 6 as a doping gas, with a high average growth rate of 0.20 µm min −1 at 570 • C. The relation between the hole mobility and carrier concentration in heavily B-doped Si films can be well fitted with that reported for bulk Si single crystals up to the carrier concentration of 5 × 10 19 cm −3 . This result demonstrates that the electrical quality of heavily doped Si epitaxial films grown by AP-PCVD is sufficiently high for semiconductor device applications. The activation ratio of B atoms as acceptors in the heavily doped films is nearly 100% for a carrier concentration range reaching approximately 2 × 10 19 cm −3 . Cross-sectional transmission electron microscopy examination of heavily B-doped epitaxial Si with a carrier concentration of 2 × 10 19 cm −3 revealed both a defect-free film and film/substrate interface. In the present experiment, the required B 2 H 6 /SiH 4 ratio is much higher than the resultant B composition in the Si films, due to thermal decomposition of B 2 H 6 molecules in the porous carbon electrode. To increase the efficiency of B 2 H 6 gas usage, cooling of the porous carbon electrode during the AP-PCVD process may be effective. Copyright

We have investigated characteristics of in situ B-doped and selective Si epitaxial growth by atmospheric-pressure plasma chemical vapor deposition (AP-PCVD) at VHF frequency. Using B 2 H 6 as a doping gas, defect-free in situ B-doped epitaxial Si films were grown by AP-PCVD at 570ºC. A high carrier concentration up to 10 20 cm -3 was achieved at a high growth rate of 0.20 µm/min. The hole mobility of highly B doped Si films is the same as that of bulk Si single crystals, demonstrating that the electrical quality of AP-PCVD Si film is high enough for semiconductor device applications. Si selective epitaxial growth by AP-PCVD has also been studied using atomic hydrogen as etchant species. Highly selective epitaxial growth of Si with good film quality has been observed at 470ºC by increasing H 2 gas concentration in the plasma.

No abstract