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A complete analysis of noise in inductively source degenerated CMOS LNA's is presented. One parameter that has great impact on the noise performance of the LNA is L s . For small L s the noise of M 1 is dominant, but increasing the L s causes the output noise power due to other components grow noticeably. We use the MAT-LAB for simulating the LNA whereas all parasitics are extracted from a 0.35 µm CMOS HSPICE technology file. It is supposed the LNA used in the front-end of a prototype UMTS receiver.

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