An induction method for space charge measurement is compared with the usual current measuring method. Its working principle is straightforward and no protective measure has to be taken to safeguard the measuring equipment. The device has been calibrated both theoretically and by an electrolytic tank method. Typical results are given for electrical discharge studies in point-plane gaps in SF,.

A 1.3 μm InGaAsP/InP surface-emitting laser of a new design is demonstrated. It consists of internal and external 45° micromirrors and emits beams from both the front and rear surfaces. The device has a buried crescent laser structure with reflection mirrors etched at vertical and 45° to the plane of the active layer. The mirror facets are fabricated using one reactive ion-beam etching process. A threshold current of 80 mA, and each output power above 0.2 mW are achieved at room temperature.

This progressive scan CCD features multiple-frame interline transfer (M-FIT) operation. The 2/3-inch 500k (948~486bpixel M-FIT CCD is implemented on the basis of a conventional 2poly-Siconventional process, and has 16:9 aspectratio (switchable to 4:3), 80dB dynamic range, and 25nAAx sensitivity. Unit cell Photo-diode I , V-CCD Output stage H-CCD J Figure 1: Configuration of M-FIT CCD. 190 01993 IEEE International Solid-state Circuits Conference 0-7803-0987-1 /931$3.001@1993 IEEE

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