Simultaneous Fabrication of Vertical and 45° Mirrors of InP for Surface-Emitting Lasers Using Inclined Cl Ion Beams

Mutoh, Katsuhiko; Wakabayashi, S.; Toyoda, Y.; Nakajima, Masahiro

doi:10.1143/jjap.30.67

Cited by 9 publications

(2 citation statements)

References 15 publications

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“…[3][4][5] In this article, we have studied a few of these methods and regrown a quantum well heterostructure on the etched surfaces by metalorganic chemical vapor deposition ͑MOCVD͒. As both regrowth and etching are better understood, innovative device structures are made possible on both wet and dry etched surfaces.…”

Section: Introductionmentioning

confidence: 99%

Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures

Yu¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inInvestigation of improved regrown material on InP surfaces etched with methane/hydrogen/argon J.Structure and formation mechanisms of AlGaAs V-groove vertical quantum wells grown by low pressure organometallic chemical vapor deposition InGaAs quantum wires grown by low pressure metalorganic chemical vapor deposition on InP V-grooves Appl.We have studied a wide variety of wet and dry etching methods for InP substrates and subsequent surface treatments in preparation for regrowth. To evaluate these processes, a multiple quantum well heterostructure consisting of InGaAs quantum wells of varying widths was regrown on these etched surfaces by metalorganic chemical vapor deposition. This heterostructure was chosen so that we could use low temperature photoluminescence to determine etch damage propagation from the surface. We have found that the photoluminescence intensity of regrown quantum wells close to CH 4 /H 2 /Ar reactive-ion-etched surfaces is greater than for quantum wells grown the same distance from wet etched surfaces. This technique provides isolation of the characteristics of the etch and clean-up procedure.

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Section: Introductionmentioning

confidence: 99%

Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures

Yu¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…On the other hand, the angled etching technique can also be achieved by ion-beam-assisted etching (IBAE). [12][13][14][15][16] However, its system configuration is complex. That is, the plasma source is separated from the etching process region in the same vacuum chamber, and it is necessary to irradiate the ion flux extracted through a grid electrode to the sample placed on a tilted holder for the angled etching process.…”

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confidence: 99%

Angled etching of (001) rutile Nb–TiO₂substrate using SF₆-based capacitively coupled plasma reactive ion etching

Matsutani

Nishioka

Sato

et al. 2014

Jpn. J. Appl. Phys.

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We demonstrated the plasma etching of a (001) rutile Nb–TiO2 substrate using SF6 plasma. A vertical etching profile and a smooth etched surface were obtained. In addition, the angled etching of a (001) rutile Nb–TiO2 substrate was achieved in a conventional SF6 reactive ion etching system for the first time. The etching angle was determined by the angle of the groove of the holder. We believe that our simple dry etching technique is suitable for the formation of a three-dimensional photonic crystal with complete photonic bandgap (CPBG) and optical waveguides.

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Readout of Images on Spatial Light Modulator Using Reading Light Supplier

Kawai

Takeuchi

1994

OPT REV

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A readout function of a reading light supplier (RLS) is demonstrated by reading out images from an optical addressable spatial light modulator (SLM). The RLS supplies reading light to the reading side 0L the SLM and transmits readout images from the SLM. The RLS consists of a fiber plate and a redirector which has micro conical-hollows. The RLS contrast, which is the intensity ratio of the reading light to the stray light, is 9.2 and the power efficiency of the reading light supply is about 5%. A writing pattern on the SLM is a checkered pattern of 5 mmX5 mm cells, and it is read out successfully using the RLS. The maximum contrast of the readout image is 1.9.

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Simultaneous Fabrication of Vertical and 45° Mirrors of InP for Surface-Emitting Lasers Using Inclined Cl Ion Beams

Cited by 9 publications

References 15 publications

Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures

Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures

Angled etching of (001) rutile Nb–TiO₂substrate using SF₆-based capacitively coupled plasma reactive ion etching

Readout of Images on Spatial Light Modulator Using Reading Light Supplier

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Simultaneous Fabrication of Vertical and 45° Mirrors of InP for Surface-Emitting Lasers Using Inclined Cl Ion Beams

Cited by 9 publications

References 15 publications

Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures

Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures

Angled etching of (001) rutile Nb–TiO2substrate using SF6-based capacitively coupled plasma reactive ion etching

Readout of Images on Spatial Light Modulator Using Reading Light Supplier

Contact Info

Product

Resources

About

Angled etching of (001) rutile Nb–TiO₂substrate using SF₆-based capacitively coupled plasma reactive ion etching