Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.

Absence of anomalous Nernst effect in spin Seebeck effect of Pt/YIG AIP Advances 6, 015018 (2016); 10.1063/1.4941340Dual resonant structure for energy harvesting from random vibration sources at low frequency AIP Advances 6, 015019 (2016) The results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric Mn x Si 1-x (x≈0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al 2 O 3 (0001) single crystal substrates at T = 340 • C are present. A highlight of used PLD method is the non-conventional ("shadow") geometry with Kr as a scattering gas during the sample growth. It is found that the films exhibit high-temperature (HT) ferromagnetism (FM) with the Curie temperature T C ∼ 370 K accompanied by positive sign anomalous Hall effect (AHE); they also reveal the polycrystalline structure with unusual distribution of grains in size and shape. It is established that HT FM order is originated from the bottom interfacial self-organizing nanocrystalline layer. The upper layer adopted columnar structure with the lateral grain size ≥ 50 nm, possesses low temperature (LT) type of FM order with T c

No abstract

No abstract