We present results on mid-gap metal gated MOSFETs using CoSi 2 & W with Si oxide & oxynitride gate dielectrics. For CoSi 2 gates, we demonstrate a simple integration scheme using silicidation of the polysilicon (poly) gate with low nFET Tinv~1.7nm. For the W gate stack, we use a replacement gate process resulting in a pFET Tinv~1.8 nm. W pFET mobility is comparable to poly, while nFET peak mobility is degraded.
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