A new filter arc deposition (FAD) system has been developed to satisfy the requirements of magnetic storage devices. This work briefly describes the 45° magnetic filter cathodic arc deposition process and investigates how substrate bias, hydrogenating, and nitrogen-doping affect the electrical properties of amorphous diamond-like carbon films. Experimental results indicate that increasing in substrate bias and/or nitrogen doping into the film during the process would lower the resistance of the film. All these evidences indicate the post-deposited film is more “graphite-like”. The effect of hydrogen flow in the film is less significant. It is believed that the hydrogen can prevent the nucleation of the graphite phase, and can also stabilize of sp3 bonding. The phenomenon clearly indicates that the film is more “diamond-like”.

This paper describes the experimental imaging of a spherical particle diffraction pattern obtained in back, forward and side scattering configurations, using illumination from three different beam shapes. The experimental problems encountered for each of the viewing configurations and the theoretical analysis of the diffraction pattern of the particle on its image plane using the generalized Lorenz-Mie theory are discussed. The images obtained are quantitatively compared with calculated results and implications for particle position estimation are discussed.

kbstract.High precision data for the electrical resistance of dysprosium in the region of the NCel point have been obtained using the Direct Current Comparator method. Results are given for both b-and c-axis samples cut from the same high quality monocrystal. In the immediate vicinity of the Nee1 point (1 T -TNl < 2.5 K), the c-axis resistance, Rc, cannot be convincingly described by a power law, Reasons for this are discussed. However, Rc is described by a power law for 2.5 < T -TN < 60 K and for -15 6 T -TN 5 -2.5 K with exponents $+ = 0.60 and 3 -N 1.25 respectively, In the case of b-axis data, R, is linearly dependent on T for T 2 TN, whereas a power law, of weak amplitude but with $-1 1.25, is valid below T,. The results suggest that dRjdT varies as the magnetic specific heat below TN for both the b-and c-axis resistance $ Present address:

Amorphous hydrogenated silicon carbide (a-SiC:H) films were deposited using plasma-enhanced chemical vapor deposition (PECVD) process. Reducing silane flow rate increased the carbon concentration and optical band gap in the a-SiC:H films, but decreased the refractive index and dielectric constant. X-ray photoelectron spectroscopy (XPS) data revealed that the carbon concentration decreased as the methane flow rate increased, but the silicon concentration increased. Increasing the carbon concentration in the a-SiC:H film reduces the dielectric constant of the film. The carbon-rich a-Si0.24C0.68:H y films treated with hydrogen plasma for various periods, were converted into films with more silicon content. Increasing the hydrogen plasma treatment period gradually roughened the surface even though the original film had a smooth surface, with a roughness <0.231 nm. The leakage current density of the hydrogen plasma treated a-Si0.24C0.68:H y films declined as the duration of the hydrogen plasma treatment period decreased.

The equilibrium and stability of MARFEs are considered. It is demonstrated that important aspects of the two dimensional problem can be illustrated by a one dimensional treatment. A stability analysis indicates that MARFE formation requires low temperature, high impurity content and low cross-field transport. Additionally, MARFEs tend to form on flux surfaces that contain an X point. It is observed that the transition to a MARFE-like solution can result from a fluctuation induced jump from a neighbouring constant temperature solution.