Effects of Ammonia Plasma Treatment on the Electrical Properties of Plasma-Enhanced Chemical Vapor Deposition Amorphous Hydrogenated Silicon Carbide Films

Abstract

This paper describes the experimental imaging of a spherical particle diffraction pattern obtained in back, forward and side scattering configurations, using illumination from three different beam shapes. The experimental problems encountered for each of the viewing configurations and the theoretical analysis of the diffraction pattern of the particle on its image plane using the generalized Lorenz-Mie theory are discussed. The images obtained are quantitatively compared with calculated results and implications for particle position estimation are discussed.

Comprehensive comparison of electrical and reliability characteristics of various copper barrier films

“…[1][2][3] Its main disadvantage is its high dielectric constant ͑k =7ϳ 8͒, which limits the reduction of the resistancecapacitance delay in ultralarge scale integration. [6][7][8][9][10] However, very few have studied the effects of various barrier materials on the reliability of the Cu dual-damascene process. Silicon carbonitride ͑SiCN͒ and silicon carbonoxide ͑SiCO͒ films, deposited by plasma-enhanced chemical vapor deposition ͑PECVD͒ for use in the Cu damascene process, have recently received much attention.…”

Comparison of characteristics and integration of copper diffusion-barrier dielectrics

“…Thus, this increases the effective k value of stack dielectric films, and limits the reduction of the RC delay in ultra large-scale integration [4,5]. As a result, amorphous silicon carbide (SiC), amorphous silicon nitricarbide (SiCN), and amorphous silicon oxycarbide (SiCO) deposited using a plasmaenhanced chemical vapor deposition (PECVD) system have received much attention for applications as Cu cap barrier and ESL in Cu damascene process [6][7][8][9]. The intrinsic properties of carbon-doped barrier films (SiCN and SiCO) have been extensively investigated by many researchers [10 -12].…”

The effect of localized lateral growth of multiwalled carbon nanotubes with ammonia plasma post‐treatment

“…It is suggested in our previous work that the surface performances can be modified by ammonia plasma . Moreover, ammonia is used for providing hydrogen ions to passivate the surface and reduce the dangling bond density on the surface of materials, such as low‐k, SiC, and polymer . In contrast, research on the surface properties of post‐treatment on the lateral CNT has not drawn equal attention.…”