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). Practical fabrication and analysis of an optimized compact eightchannel silicon arrayed-waveguide grating. Optical Engineering, 52 (6), 064602-1-064602-5.Practical fabrication and analysis of an optimized compact eight-channel silicon arrayed-waveguide grating AbstractWe have designed, fabricated, and characterized a 1 x 8 ultrasmall compact arrayed-waveguide grating (AWG) on silicon-on-insulator (SOI) in a fiber grating demodulation integration microsystem. The miniature AWG, consisting of Si photonic wire waveguides, was designed using the complete modeling simulation in the beam propagation method. The device was fabricated on an SOI substrate and evaluated in the wavelength range around 1.55 μm, with an effective area of 230 x 160 μm. Clear demultiplexing characteristics were observed with a channel spacing of 1.91 nm. The influence of the waveguide widths on crosstalk defined by adjacent channel crosstalk and phase error is discussed. Insertion loss, crosstalk, and nonuniformity of loss were measured to be −3.18, −23.1, and −1.35 dB, respectively. Thus, the AWG design is the best choice for a fiber Bragg grating demodulation microsystem. Abstract. We have designed, fabricated, and characterized a 1 × 8 ultrasmall compact arrayed-waveguide grating (AWG) on silicon-on-insulator (SOI) in a fiber grating demodulation integration microsystem. The miniature AWG, consisting of Si photonic wire waveguides, was designed using the complete modeling simulation in the beam propagation method. The device was fabricated on an SOI substrate and evaluated in the wavelength range around 1.55 μm, with an effective area of 230 × 160 μm. Clear demultiplexing characteristics were observed with a channel spacing of 1.91 nm. The influence of the waveguide widths on crosstalk defined by adjacent channel crosstalk and phase error is discussed. Insertion loss, crosstalk, and nonuniformity of loss were measured to be −3.18, −23.1, and −1.35 dB, respectively. Thus, the AWG design is the best choice for a fiber Bragg grating demodulation microsystem.

We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with 111-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Ah03/GaAs process for III-V MOS.

Four methods based on a multimode interference (MMI) structure are optimally designed to flatten the spectral response of silicon-on-insulator- (SOI-) based arrayed-waveguide grating (AWG) applied in a demodulation integration microsystem. In the design for each method, SOI is selected as the material, the beam propagation method is used, and the performances (including the 3 dB passband width, the crosstalk, and the insertion loss) of the flat-top AWG are studied. Moreover, the output spectrum responses of AWGs with or without a flattened structure are compared. The results show that low insertion loss, crosstalk, and a flat and efficient spectral response are simultaneously achieved for each kind of structure. By comparing the four designs, the design that combines a tapered MMI with tapered input/output waveguides, which has not been previously reported, was shown to yield better results than others. The optimized design reduced crosstalk to approximately −21.9 dB and had an insertion loss of −4.36 dB and a 3 dB passband width, that is, approximately 65% of the channel spacing.

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