The investigation of C4F8+O2 feed gas composition on both plasma parameters and plasma treated silicon surface characteristics was carried out. The combination of plasma diagnostics by Langmuir probes and plasma modeling indicated that an increase in O2 mixing ratio results in monotonically decreasing densities of CF(x) (x = 1-3) radicals as well as in non-monotonic behavior of F atom density. The surface characterization by X-ray photoelectron spectroscopy and contact angle measurements showed that the C4F8+O2 mixtures with less than 60% 02 result in modification of Si surfaces due to the deposition of the FC polymer films while the change of O2 mixing ratio in the range of 30%-60% provides an effective adjustment of the surface characteristics such as surface energy, contact angle, etc.

In order to understand the characteristics of ohmic hole-contacts for the inverted/conventional organic light emitting devices, a hole-only device with all ohmic contacts, which is composed of glass/ITO/MoOx/4,4,4-tris[2-naphthyl-phenyl-amino]triphenylamine (2-TNATA)/MoOx/Al, the elements of the electronic structures of MoOx-on-2-TNATA interface and 2-TNATA-on-MoOx interface were investigated by photoemission spectroscopy, with regards to interface energetics, formative mechanism, and a potential charge carrier injection. The electronic structures revealed that the behavior of the interface between MoOx and 2-TNATA was different whether MoOx was deposited on (2-TNATA) or vice versa. The bottom interfaces of 2-TNATA-on-MoOx in this hole-only devices showed no hole-injecting barrier height (Phi(h)B) when the thickness of 2-TNATA was deposited in the range of 0.1 to 5.0 nm on the 10.0 nm-thick MoOx thin films. This has been explained to be attributed to both metal-induced gap states and a chemical reaction at the interfaces. The top interfaces of MoOx-on-2-TNATA in this hole-only device structure also showed no Phi(h)B when a hole was injected from the MoOx-on-2-TNATA interfaces to cathode. The hole-ohmic property in the top interfaces depends on interface dipole by the formation of charge transfer complexes as well as interdiffusion of MoOx into the 2-TNATA film in these interfaces.