Continuous miniaturization of semiconductor devices is the key to boosting modern electronics development. However, this downscaling strategy has been rarely utilized in photoelectronics and photovoltaics. Here, in this work, a full-van der Waals (vdWs) 1D p-Te/2D n-Bi 2 O 2 Se heterodiode with a rationally designed nanoscale ultra-photosensitive channel is reported. Enabled by the dangling bond-free mixed-dimensional vdWs integration, the Te/Bi 2 O 2 Se type-II diodes show a high rectification ratio of 3.6 × 10 4 . Operating with 100 mV reverse bias or in a self-power mode, the photodiodes demonstrate excellent photodetection performances, including high responsivities of 130 A W −1 (100 mV bias) and 768.8 mA W −1 (self-power mode), surpassing most of the reports of other heterostructures. More importantly, a superlinear photoelectric conversion phenomenon is uncovered in these nanoscale full-vdWs photodiodes, in which a model based on the in-gap trap-assisted recombination is proposed for this superlinearity. All these results provide valuable insights in light-matter interactions for further performance enhancement of photoelectronic devices.
Converting vapor precursors to solid nanostructures via
a liquid
noble-metal seed is a common vapor deposition principle. However,
such a noble-metal-seeded process is excluded from the crystalline
halide perovskite synthesis, mainly hindered by the growth mechanism
shortness. Herein, powered by a spontaneous exothermic nucleation
process (ΔH < 0), the Au-seeded CsPbI3 nanowires (NWs) growth is realized based on a vapor–liquid–solid
(VLS) growth mode. It is energetically favored that the Au seeds are
reacted with a Pb vapor precursor to form molten Au–Pb droplets
at temperatures down to 212 °C, further triggering the low-temperature
VLS growth of CsPbI3 NWs. More importantly, this Au-seeded
process reduces in-bandgap trap states and consequently avoids Shockley–Read–Hall
recombination, contributing to outstanding photodetector performances.
Our work extends the powerful Au-seeded VLS growth mode to the emerging
halide perovskites, which will facilitate their nanostructures with
tailored material properties.
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