We report on measurements of the thermal conductivity of reactively sputtered aluminum nitride (AlN) thin films with different thickness, ranging from 100nm to 1μm, on silicon substrates. The measurements were made at room temperature using the pulsed photothermal reflectance technique. The thermal conductivities of the sample are found to be significantly lower than the single-crystal bulk AlN and increase with an increasing thickness. The thermal resistance at the interface between the AlN film and the silicon substrate is found to be about 7–8×10−8m2K∕W.

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Thermal conductivity of Gallium Arsenic Nitride ( GaAsN ) epilayer on Gallium Arsenide ( GaAs ) substrate prepared by Molecular Beam Epitaxy technique was measured using pulsed photothermal reflectance technique. Within the thickness ranging from 20 nm to 80 nm, no thickness dependent relationship with thermal conductivity of GaAsN epilayer was found, and the average thermal conductivity is about 28 W/mK at room temperature.