Spintronic devices can realize multi‐state storage and be used to simulate artificial synapses or artificial neurons, which makes them have promising application prospect in the field of artificial neural networks (ANN). This work investigates the current‐induced magnetization reversal in stacked (Ta/CoFeB/MgO)N structures and their application in ANN. It is demonstrated that the complete current‐induced magnetization reversal with large intermediate transition region can be achieved in the sample with N = 2. The magneto‐optical Kerr microscope imaging shows that the large transition region for the sample is ascribed to the “layer‐by‐layer” reversal, owing to the difference of the coercivity of two CoFeB layers. In addition, the simulation of artificial synapses and artificial neurons function based on current‐induced magnetization reversal in the sample is also demonstrated. These results substantiate the stacked (Ta/CoFeB/MgO)N structures as a promising platform for realizing the multi‐level state and artificial synapses function, and its potential application in the field of ANN.

We investigated the ferromagnet (FM) and heavy metal (HM) thickness dependence of the electric current-induced spin orbit torque (SOT), especially the field-like (FL) torque component in HM/CoFeB/MgO heterostructures. For Pt/CoFeB/MgO and Ta/CoFeB/MgO structures, after subtracting the dead-layer thickness of CoFeB, the damping-like (DL) effective field follows 1/tFM dependence, while the FL effective field deviates from 1/tFM dependence at the ultra-thin FM thickness range, indicating that an extra origination of FL torque, i.e., spin backflow at the FM/MgO interface, is responsible for the large FL torque in HM/CoFeB/MgO structures with a ultra-thin CoFeB layer. For Ta/Pt(tPt)/CoFeB(1)/MgO structures, the FL-SOT exhibits a gradual change similar to the DL-SOT, suggesting that the spin Hall effect is the dominant origination of spin current, which enhances the FL-SOT in the HM/CoFeB/MgO structures by the spin backflow effect when tCoFeB is less than the spin dephasing length. We also demonstrated that the obvious dead-layer thickness at the Ta/CoFeB interface reduces the effective CoFeB thickness and enhances the spin backflow effect further.

Current-induced magnetization switching in compensated ferrimagnetic materials by the spin–orbit torque (SOT) effect is promising for the next generation information storage devices. In this work, we report the current-induced deterministic field-free magnetization switching of the perpendicular Tb-Co ferrimagnet layer in a Co/Ti/Tb-Co trilayers. We found that the switching proportion and polarity of the Tb-Co ferrimagnet depend on the magnetization direction of the in-plane Co layer. The switching process revealed by magneto-optical Kerr microscope imaging further confirmed the current-induced field-free switching of the Tb-Co layer. We also demonstrated the large SOT effective field and the perpendicular effective field acting on the Tb-Co layer, by utilizing the second harmonic voltage measurement and the current-induced loop shift method. The large interfacial SOT efficiency and deterministic field-free magnetization switching in the trilayers structure may accelerate the application of ferrimagnet in SOT memory devices.

Spintronic devices can realize multilevel state storage and mimic the properties of the synapse, which enables their potential application in the field of artificial neural networks. In this paper, we demonstrate the existence of a large intermediate transition zone in current-induced magnetization switching curves of Pt/Co–Tb/Ta structures, and the number of states in the transition zone that can be manipulated by changing the Co content. The magneto-optical Kerr microscope imaging indicates that this property is related to the constrained domain wall motion in the Co–Tb films with large Co content. We also demonstrate the multilevel state storage properties of the sample by applying a sequence of current pulses. The synaptic plasticity behaviors were mimicked in these samples through regulating the value of Hall resistance by current pulses. The constrained domain wall motion supplies a simple but effective way to achieve multilevel state storage and show potential applications in neuromorphic computing.

The microscopic mechanism for the current-induced spin–orbit torque (SOT) in magnetic heterostructures is still under debate. The accurate measurement of SOT effective fields and their thickness dependence is the basis for understanding this issue. In this work, we measured the SOT effective fields for Pt/NiFe bilayers by utilizing the harmonic longitudinal voltage (HLV) method with a Wheatstone bridge structure. Benefiting from the elimination of the linear resistance in the bridge structure and the large magnetoresistance difference resulting from the large length–width ratio of the bridge element, we achieved very high measurement accuracy for both field-like and damping-like effective fields in the Pt/NiFe bilayers. On this basis, we demonstrated the possibility of the SOT measurement with a relatively low current density (∼109 A/m2) by utilizing the HLV method with a Wheatstone bridge structure and found that the method we proposed is also applicable to the Pt/CoFeB system with a low anisotropic magnetoresistance ratio.