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A ratio based hot-carrier degradation model for aged timing simulation of large CMOS circuits is presented. The model introduces gate-level representation and simply uses timing information.The proposed model is implemented in the prototype simulator in which the aged timing is obtained from the fresh timing and the precharacterized ratio. The simulated results show that the simulation can be performed at the size and speed of logic simulation with comparable accuracy of transistor-level simulator BTABERT.

This paper proposes a new methodology to accurately predict the impact of inductance on on-chip wire delay using response surface functions (RSF). The proposed methodology consists of two stages which involves first calculating the delay difference between RC and RLC wire models for a set of parameter variations, then building RSFs using electrical parameters such as wire resistance, capacitance, etc. , and physical parameters such as wire width, pitch, etc. as variables. The proposed methodology can help 1) to define design rules for avoiding inductance effects, 2) to point out wires that require RLC delay calculation, and 3) to estimate and correct the delay when using an RC model. An example design rule for limiting self inductance and accurate estimation of the delay difference for a 100 nm technology node is also presented.

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