We comprehensively calculated the photonic bands of the waveguide modes in practical lattice-shifted photonic crystal waveguides, which are completely cladded by silica. We assumed various lattice shifts and found that the shift of the second rows and the mixed shift of the first and third rows along the waveguide generate low-dispersion slow light with group indices of 34 -36, which is higher than those with a conventional shift of the third rows, maintaining a wide bandwidth over 10 nm at telecom wavelengths. We fabricated the waveguides using a CMOS-compatible process and confirmed correspondence with the calculation results. We also compared 25-Gbps photonic crystal slow light Mach−Zehnder modulators and confirmed the improvement of the modulation efficiency by second-row shifts.

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Optical modulators for optical interconnects require a small size, small voltage, high speed and wide working spectrum. For this purpose, we developed Si slow-light Mach-Zehnder modulators via a 180 nm complementary metal-oxide-semiconductor process. We employed 200 µm lattice-shifted photonic crystal waveguides with interleaved p-n junctions as phase shifters. The group index spectrum of slow light was almost flat at n g « 20 but exhibited˘10% fluctuation over a wavelength bandwidth of 20 nm. The cutoff frequency measured in this bandwidth ranged from 15 to 20 GHz; thus, clear open eyes were observed in the 25 Gbps modulation. However, the fluctuation in n g was reflected in the extinction ratio and bit-error rate. For a stable error-free operation, a 1 dB margin is necessary in the extinction ratio. In addition, we constructed a device with varied values of n g and confirmed that the extinction ratio at this speed was enhanced by larger n g up to 60. However, this larger n g reduced the cutoff frequency because of increased phase mismatch between slow light and radio frequency signals. Therefore, n g available for 25 Gbps modulation is limited to up to 40 for the current device design.

We demonstrate 64 Gbps operation in a compact Si photonic crystal optical modulator that employs meander line electrodes and compensate for the phase mismatch between slow light and RF signals. Although low dispersion slow light increases the modulation efficiency, maintaining a sufficiently wide working spectrum, the phase mismatch becomes a limiting factor on the operation speed even when the phase shifter length is as short as 200 μm. Meander line electrodes broke this limit and enhanced the cutoff frequency by up to 31 and 38 GHz using 50 Ω and 20 Ω termination resistors, respectively. This allowed to use a group index of slow light higher than 20, and greatly improved the quality of the modulation characteristics at 25 and 32 Gbps. Clear open eye was observed even at 40-64 Gbps.

For next-era optical interconnects in data centers, development of compact, energy-efficient, low-cost, and high-speed optical transceivers are required, for which high-performance external modulators in silicon photonics will be key components. We present a silicon photonic crystal waveguide slow light Mach-Zehnder modulator suitable for this purpose. The enhancement in the modulation efficiency via the slow light effect reduces the halfwave voltage-length product VπL, maintaining a wide working spectrum over 15 nm. The frequency response of the slow light modulator is constricted by an electrooptic phase mismatch between slow light and RF signals. In this study, this was dramatically improved by matching the phase using meanderline electrodes that delay RF signals. The cutoff frequency was experimentally evaluated to be 32-38 GHz. Using this device, we demonstrated high-speed modulation, including 64-Gbps on-off keying, 100-Gbps pulse amplitude modulation, and 50-Gbps/ch wavelength division multiplexing in 170-200-µmlong devices.