Si Photonic Crystal Slow-Light Modulators with Periodic p–n Junctions

Terada, Yosuke; Tatebe, Tomoki; Hinakura, Yosuke; Baba, Toshihiko

doi:10.1109/jlt.2017.2658668

Cited by 31 publications

(20 citation statements)

References 16 publications

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“…The energy dissipation is then 0.26 pJ/bit for SLOW50 and 0.45 pJ/bit for SLOW150. These values are reduced up to one order of magnitude compared to typical modulators based on normal rib waveguides [14,19], and are comparable to those obtained with PhC waveguides [37].…”

Section: Configurationsupporting

confidence: 73%

“…[35]. We should notice that slow-light MZ modulators with interleaved (or, more generally, modulated) p-n junctions have been deeply studied in the context of 2D PhC waveguides for wavelengths in the C-band (λ = 1.55 μm) [36,37]. The grating waveguides considered here have the advantage of being more compatible with standard silicon photonic circuits on widespread industrial platforms, especially because the structure is simpler and less demanding in terms of optical design and fabrication, and low-loss tapers with standard rib waveguides are easily available.…”

Section: Introductionmentioning

confidence: 99%

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Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

et al. 2019

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Slow light is a very important concept in nanophotonics, especially in the context of photonic crystals. In this work, we apply our previous design of band-edge slow light in silicon waveguide gratings [M. Passoni et al, Opt. Express 26, 8470 (2018)] to Mach-Zehnder modulators based on the plasma dispersion effect. The key idea is to employ an interleaved p-n junction with the same periodicity as the grating, in order to achieve optimal matching between the electromagnetic field profile and the depletion regions of the p-n junction. The resulting modulation efficiency is strongly improved as compared to common modulators based on normal rib waveguides, even in a bandwidth of 20-30 nm near the band edge, while the total insertion loss due to free carriers is not increased. The present concept is promising in view of realizing slow-light modulators for silicon photonics with reduced energy dissipation.

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Section: Configurationsupporting

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

et al. 2019

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“…Other method for using silicon based devices for modulation is to utilize the plasma dispersion effect, which is the change of refractive index with the free carrier (electrons and holes) concentration 46 , 47 . This process could be performed with injection 19 , 33 , depletion 18 , 20 – 25 , 34 , 36 , 37 or accumulation 17 , 26 , 27 , 30 , 32 of the carriers.…”

Section: Introductionmentioning

confidence: 99%

“…The required relative phase shift between the two light waves propagating inside the arms of a MZI is only possible with a change in refractive index. Recently, a large number of studies on MZI based modulators have been performed with phase shifter structures composed of traditional pn, p-i-n diodes or MOS structures and as a consequence, high operation speeds up to 50 Gb/s were obtained 17 – 27 . However, among all these designs, the shortest phase shifter length seems to be 200 µm 17 , 20 , 21 and the lowest voltage swing for a proper modulation is 1.75V pp with −0.9 V DC offset 17 , 20 .…”

Section: Introductionmentioning

confidence: 99%

“…Recently, a large number of studies on MZI based modulators have been performed with phase shifter structures composed of traditional pn, p-i-n diodes or MOS structures and as a consequence, high operation speeds up to 50 Gb/s were obtained 17 – 27 . However, among all these designs, the shortest phase shifter length seems to be 200 µm 17 , 20 , 21 and the lowest voltage swing for a proper modulation is 1.75V pp with −0.9 V DC offset 17 , 20 . Furthermore, in order to increase the relative phase shift (Δ ϕ ) between arms of MZI and reduce the length of phase shifter, in some designs push-pull drive has been employed 17 .…”

Section: Introductionmentioning

confidence: 99%

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Integrated Optical Modulator Based on Transition between Photonic Bands

Gövdeli

Sarihan

Karaca

et al. 2018

Sci Rep

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An area efficient novel optical modulator with low operation voltage is designed based on integrated Mach-Zehnder Interferometer with a photonic crystal slab structure as the phase shifter. Plasma dispersion effect is utilized so that photonic band-to-band transition occurs at the operating frequency leading to a high index change (Δn = ~4) for π-phase shift on the modulator. This approach reduces the phase shifter length to a few micrometers (~5 µm) in a silicon on insulator platform and operating voltage required is around 1 V. Low voltage together with short optical interaction length decrease optical losses and power consumption during modulation process providing a great opportunity for size and system cost optimization.

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Hyperuniform disordered waveguides and devices for near infrared silicon photonics

Milošević

Man

Nahal

et al. 2019

Sci Rep

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We introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform unconstrained by crystalline symmetries. The designs proposed advantageously leverage the large, complete, and isotropic photonic band gaps provided by hyperuniform disordered structures. An integrated design for a compact, sub-volt, sub-fJ/bit, hyperuniform-clad, electrically controlled resonant optical modulator suitable for fabrication in the silicon photonics ecosystem is presented along with simulation results. We also report results for passive device elements, including waveguides and resonators, which are seamlessly integrated with conventional silicon-on-insulator strip waveguides and vertical couplers. We show that the hyperuniform-disordered platform enables improved compactness, enhanced energy efficiency, and better temperature stability compared to the silicon photonics devices based on rib and strip waveguides.

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Si Photonic Crystal Slow-Light Modulators with Periodic p–n Junctions

Cited by 31 publications

References 16 publications

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

Integrated Optical Modulator Based on Transition between Photonic Bands

Hyperuniform disordered waveguides and devices for near infrared silicon photonics

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