The fourth generation of the Sloan

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A 348 nm ultraviolet-light-emitting diode (UV-LED) based on an AlGaN/GaN single quantum well (SQW) with a high optical power is reported. In this structure, a thin SiN buffer is introduced before the growth of a conventional low-temperature GaN buffer layer. Such a buffer layer can dramatically reduce the density of threading dislocation as we have previously reported. Since the optical performance of UV-LED is generally known to be sensitive to the density of threading dislocations, unlike the InGaN/GaN-based blue LED, our UV-LED has a higher optical power than that of a similar structure but without a SiN buffer layer. Since our new buffer technology is much easier than the so-called epitaxial lateral overgrowth (ELO) or pendeoepitaxy method, it is highly recommended for use in the fabrication of GaN-based optical devices, particularly AlGaN/GaNbased UV-LED.

These preliminary results demonstrated that 7 T magnetic resonance imaging together with a three dimensional image analysis and modeling technique could provide information for detection of the vessel related to the infarct. In addition, three dimensional image analysis and modeling of vessels could further provide quantitative information on the microvessel structures comprising diameter, length and tortuosity.