For the writing current reduction, we firstly proposed and successfully manufactured phase change memory device with U-shaped heater (PCM-U) device, in which TiN heater surrounds Ge2Sb2Te5 (GST). The experimental results clearly indicate that PCM-U has noticeably shorter SET operation time and 50% smaller RESET current, compared with the conventional. We suggest that the improved properties of PCM-U are due to the overlap of programmable volume.

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