Writing Current Reduction in Phase Change Memory Device with U-shaped Heater (PCM-U)

Park, Young Sam; Choi, Kyu Jeong; Lee, Nam Yeal; Yoon, Sung Min; Lee, Seung Yun; Ryu, Sang-Ouk; Yu, Byoung Gon

doi:10.1143/jjap.45.l516

Cited by 16 publications

(8 citation statements)

References 7 publications

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“…So far, Ge 2 Sb 2 Te 5 material has been mainly employed for the fabrication of C-RAM due to the good electrical and thermal performance. [5][6][7][8] Great efforts have also been made on researches of new-composition phase change materials for C-RAM application in the recent years. Various kinds of materials were studied, such as Sb-Te, 9) Ge 1 Se 1 Te 2 , 10) Sb-Se, 11) In-Se, 12) Si-Sb-Te, 13) etc.…”

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confidence: 99%

High Speed Chalcogenide Random Access Memory Based on Si₂Sb₂Te₅

Zhang¹,

Zhang

Rao

et al. 2007

jjap

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An approach to creating the highest-order multiple-quantum coherences is developed. The method is based on using the multiple-quantum NMR technique and various initial conditions and can be considered as supplemental to earlier developed methods. Using the dipolar ordered state as the initial one, it is demonstrated that in a cluster of four and eight dipolar-coupled nuclear spins the highest-order multiple-quantum coherences can be created.

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confidence: 99%

High Speed Chalcogenide Random Access Memory Based on Si₂Sb₂Te₅

Zhang¹,

Zhang

Rao

et al. 2007

jjap

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“…66,67 If the chalcogenide-insulator nanocomposite structure is employed to obtain a programmable medium (Figure 7d), the phase transition induced by resistive Joule heating can be promoted because of the concentration of thermal heat with a reduced volume of the programmable medium. 68 Therefore, a lower programming current is required, which enables the phase change in memory devices with low power consumption. 69,70 The obtained results verify that the nanocomposite film can aid in improving the performance of several devices; nevertheless, its sophisticated fabrication technique requires further analysis and development.…”

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confidence: 99%

Microstructural Analysis and Optical Property Control of GeTe Chalcogenide-Zirconia Nanoparticle Nanocomposite Films for Device Application

Yoon

Kim

Lee

et al. 2023

ACS Appl. Electron. Mater.

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Phase-change chalcogenide materials are extensively employed in various fields, particularly for electronic and optical applications. In this study, we demonstrated the optical property tuning of germanium telluride (GeTe) chalcogenide-ZrO2 nanocomposite films through microstructural modification using nanoparticle spin-coating and thin film reflow. Pile-up features were observed in the case of spin-coated ZrO2 nanoparticle nanocolloids, which optimized the higher spin speeds to enable the deposition of uniform and high-transmittance ZrO2 nanoparticle layers. Additionally, the capillary-driven mass transport at elevated temperatures resulted in the agglomeration and reflow of GeTe films, particularly in the near-eutectic composition of GeTe(1:4) with reduced thickness. The morphological evolution of the GeTe films was used to fabricate nanocomposite films by sputter depositing the films on spin-coated ZrO2 nanoparticle layers, followed by thermal annealing. The postannealing temperature was crucial for controlling the transmittance, which primarily determined the color of the nanocomposite films. Different colored nanocomposite films were obtained by adjusting the spin speed, GeTe thickness, and postannealing temperature. The results indicated that the application of the developed nanocomposite films to semitransparent photovoltaic devices increased the conversion efficiency owing to the light scattering property of the films, in addition to improving the aesthetic appearance.

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“…In addition the relatively long crystallization time of GST (∼ hundreds nanoseconds) limits the ultimate operation speed of the PCRAM device [7]. A confined cell structure where the phase-change material is formed inside a contact via is expected to be essential for the next-generation PCRAM device because it requires lower switching power [8]. This structure however requires more complex deposition of the active chalcogenide into a cell pore.…”

Section: Introductionmentioning

confidence: 99%

Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

Huang

Gholipour

Knight

et al. 2012

Advances in OptoElectronics

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Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO 2 /Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 • C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD) techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase-change switching demonstrated electrically, with a threshold voltage of 2.2-2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase-change memory and optical, electronic, and plasmonic switching.

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Writing Current Reduction in Phase Change Memory Device with U-shaped Heater (PCM-U)

Cited by 16 publications

References 7 publications

High Speed Chalcogenide Random Access Memory Based on Si₂Sb₂Te₅

High Speed Chalcogenide Random Access Memory Based on Si₂Sb₂Te₅

Microstructural Analysis and Optical Property Control of GeTe Chalcogenide-Zirconia Nanoparticle Nanocomposite Films for Device Application

Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

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Writing Current Reduction in Phase Change Memory Device with U-shaped Heater (PCM-U)

Cited by 16 publications

References 7 publications

High Speed Chalcogenide Random Access Memory Based on Si2Sb2Te5

High Speed Chalcogenide Random Access Memory Based on Si2Sb2Te5

Microstructural Analysis and Optical Property Control of GeTe Chalcogenide-Zirconia Nanoparticle Nanocomposite Films for Device Application

Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

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High Speed Chalcogenide Random Access Memory Based on Si₂Sb₂Te₅

High Speed Chalcogenide Random Access Memory Based on Si₂Sb₂Te₅