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Thickness-dependent bandgap and carrier mobility of two-dimensional (2D) van der Waals (vdW) layered materials make them a promising material as a phototransistor that detects light signals and converts them to electrical signals. Thus far, to achieve a high photoresponsivity of 2D materials, enormous efforts have been made via material and dielectric engineering, as well as modifying device structure. Nevertheless, understanding the effect of interplay between the thickness and the carrier mobility to photoresponsivity is little known. Here, we demonstrate the tunable photoresponsivity (R) of 2D multilayer rhenium disulfide (ReS2), which is an attractive candidate for photodetection among 2D vdW materials owing to its layer-independent direct bandgap and decoupled vdW interaction. The gate bias (VG)-dependent photocurrent generation mechanism and R are presented for the channel thickness range of 1.7–27.5 nm. The high similarity between VG-dependent photocurrent and transconductance features in the ReS2 phototransistors clearly implies the importance of the channel thickness and the operating VG bias condition. Finally, the maximum R was found to be 4.1 × 105 A/W at 14.3 nm with the highest carrier mobility of ∼15.7 cm2⋅V−1⋅s−1 among the fabricated devices after excluding the contact resistance effect. This work sheds light on the strategy of how to obtain the highest R in 2D vdW-based phototransistors.

The fabrication of a stretchable single-walled carbon nanotube (SWCNT) complementary metal oxide semiconductor (CMOS) inverter array and ring oscillators is reported. The SWCNT CMOS inverter exhibits static voltage transfer characteristics with a maximum gain of 8.9 at a supply voltage of 5 V. The fabricated devices show stable electrical performance under the maximum strain of 30% via forming wavy configurations. In addition, the 3-stage ring oscillator demonstrates a stable oscillator frequency of ∼3.5 kHz at a supply voltage of 10 V and the oscillating waveforms are maintained without any distortion under cycles of pre-strain and release. The strains applied to the device upon deformation are also analyzed by using the classical lamination theory, estimating the local strain of less than 0.6% in the SWCNT channel and Pd electrode regions which is small enough to keep the device performance stable under the pre-strain up to 30%. This work demonstrates the potential application of stretchable SWCNT logic circuit devices in future wearable electronics.

Nanofiber non-woven mats of gelatin/poly(l-lactic acid) composites were fabricated by electrospinning. The mechanical strength of the composite mats was much larger than that of the gelatin nanofiber mat. Mesenchymal stem cells adhered and proliferated well on the present composite mats.

Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an AlO layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.