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In order to improve the n-type characteristics of pentacene, pentacene-based metal–oxide–semiconductor (MOS) diodes with ultrathin Yb interface layers as a donor layer and Yb top contact fabricated by an in-situ process were investigated. The fabricated MOS diode showed n-type capacitance–voltage (C–V) characteristics with negligible hysteresis loop even though the accumulation capacitance was lower than that of the SiO2 gate insulator. It was also found that the characteristics of MOS diodes strongly depend on the interface properties between the Yb top contact electrode and pentacene. The excellent C–V characteristics were obtained using an in-situ annealing process at 50 °C for 1 h.

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