A new solution-phase halide passivation strategy to improve the electronic properties of colloidal quantum dot films is reported. We prove experimentally that the approach leads to an order-of-magnitude increase in mobility and a notable reduction in trap state density. We build solar cells having the highest efficiency (6.6%) reported using all-inorganic colloidal quantum dots. The improved photocurrent results from increased efficiency of collection of infrared-generated photocarriers.

A novel approach to improving all-inorganic colloidal quantum dot (CQD) homojunction solar cells by engineering the doping spatial profile to produce a doping gradient within the n-type absorber is presented. The doping gradient greatly improves carrier collection and enhances the voltages attainable by the device, leading to a 1 power point power conversion efficiency (PCE) improvement over previous inorganic CQD solar cells.

The phenomenon of spin resonance has had far-reaching influence since its discovery 70 years ago. Electron spin resonance driven by high-frequency magnetic fields has enhanced our understanding of quantum mechanics, and finds application in fields as diverse as medicine and quantum information. Spin resonance can also be induced by high-frequency electric fields in materials with a spin-orbit interaction; the oscillation of the electrons creates a momentum-dependent effective magnetic field acting on the electron spin. Here we report electron spin resonance due to a spin-orbit interaction that does not require external driving fields. The effect, which we term ballistic spin resonance, is driven by the free motion of electrons that bounce at frequencies of tens of gigahertz in micrometre-scale channels of a two-dimensional electron gas. This is a frequency range that is experimentally challenging to access in spin resonance, and especially difficult on a chip. The resonance is manifest in electrical measurements of pure spin currents-we see a strong suppression of spin relaxation length when the oscillating spin-orbit field is in resonance with spin precession in a static magnetic field. These findings illustrate how the spin-orbit interaction can be harnessed for spin manipulation in a spintronic circuit, and point the way to gate-tunable coherent spin rotations in ballistic nanostructures without external alternating current fields.

Herein, a solution-processed, bottom-up-fabricated, nanowire network electrode is developed. This electrode features a ZnO template which is converted into locally connected, infiltratable, TiO2 nanowires. This new electrode is used to build a depleted bulk heterojunction solar cell employing hybrid-passivated colloidal quantum dots. The new electrode allows the application of a thicker, and thus more light-absorbing, colloidal quantum dot active layer, from which charge extraction of an efficiency comparable to that obtained from a thinner, planar device could be obtained.

Field-effect transistors have been widely used to study electronic transport and doping in colloidal quantum dot solids to great effect. However, the full power of these devices to elucidate the electronic structure of materials has yet to be harnessed. Here, we deploy nanodielectric field-effect transistors to map the energy landscape within the band gap of a colloidal quantum dot solid. We exploit the self-limiting nature of the potentiostatic anodization growth mode to produce the thinnest usable gate dielectric, subject to our voltage breakdown requirements defined by the Fermi sweep range of interest. Lead sulfide colloidal quantum dots are applied as the active region and are treated with varying solvents and ligands. In an analysis complementary to the mobility trends commonly extracted from field-effect transistor studies, we focus instead on the subthreshold regime and map out the density of trap states in these nanocrystal films. The findings point to the importance of comprehensively mapping the electronic band- and gap-structure within real quantum solids, and they suggest a new focus in investigating quantum dot solids with an aim toward improving optoelectronic device performance.