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Silicon carbide (SiC) has been widely used for electronic radiation detectors and atomic battery sensors. However, the physical properties of SiC exposure to high-dose irradiation as well as its related electrical responses are not yet well understood. Meanwhile, the current research in this field are generally focused on electrical properties and defects formation, which are not suitable to explain the intrinsic response of irradiation effect since defect itself is not easy to characterize, and it is complex to determine whether it comes from the raw material or exists only upon irradiation. Therefore, a more straightforward quantification of irradiation effect is needed to establish the direct correlation between irradiation-induced current and the radiation fluence. This work reports the on-line electrical properties of 4H-SiC Schottky barrier diodes (SBDs) under high-dose electron irradiation and employs in situ noise diagnostic analysis to demonstrate the correlation of irradiation-induced defects and microscopic electronic properties. It is found that the electron beam has a strong radiation destructive effect on 4H-SiC SBDs. The on-line electron-induced current and noise information reveal a self-healing like procedure, in which the internal defects of the devices are likely to be annealed at room temperature and devices’ performance is restored to some extent.

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This work focuses on the recombination-enhanced reactions of boron related defects in compensated silicon and their impact on the electrical performance of silicon devices. Using deep level transient spectroscopy, we measured the defect spectra in the collector of 14 MeV fusion neutron irradiated p-n-p silicon transistors during forward current injection, as well as the corresponding degradation kinetics of both current gain and leakage current on the same device. Two hole traps at E c + 0.43 eV and E c + 0.53 eV are proved to be acceptors in the lower half of the gap with significant recombination enhanced effects. These metastabe acceptors degrade the current gain by changing the space charge distribution in the p-n-p structure and are linked with carrier-induced boron-oxygen complexes responsible for the minority-carrier lifetime degradation of silicon photovoltaics.