A unique "clean-lifting transfer" (CLT) technique that applies a controllable electrostatic force to transfer large-area and high-quality CVD-grown graphene onto various rigid or flexible substrates is reported. The CLT technique without using any organic support or adhesives can produce residual-free graphene films with large-area processability, and has great potential for future industrial production of graphene-based electronics or optoelectronics.
Einfach mal blau machen: Die Photolumineszenz in Suspensionen von Graphenoxid (GO) lässt sich von roter zu blauer Emission durchstimmen (siehe Bild), indem man die Anteile von sp2‐ und sp3‐C‐Atomen durch Reduktion der Oxidgruppen auf der Oberfläche schrittweise verändert. Eine Elektron‐Loch‐Rekombination aus zwei Typen angeregter Zustände kann die GO‐Lumineszenz bei unterschiedlichen Reduktionsgraden erklären.
In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/ LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.
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