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In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage (V TH ) under illumination with/without the gate bias, and the amount of shift in V TH is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in V TH under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.

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