This review has summarized and discussed the recent advances of periodic nanostructures, consisting of multiple identical nano units/components periodically arranged in good order, from their preparation and properties to applications.

Halide perovskite is one of the most promising semiconducting materials in a variety of fields such as solar cells, photodetectors, and light-emitting diodes. Lead halide perovskite single crystals featuring long diffusion length, high carrier mobility, large light absorption coefficient and low defect density, have been attracting increasing attention. Fundamental study of the intrinsic nature keeps revealing the superior optoelectrical properties of perovskite single crystals over their polycrystalline thin film counterparts, but to date, the device performance lags behind. The best power conversion efficiency (PCE) of single crystal-based solar cells is 21.9%, falling behind that of polycrystalline thin film solar cells (25.2%). The oversized thickness, defective surfaces, and difficulties in depositing functional layers, hinder the application of halide perovskite single crystals in optoelectronic devices. Efforts have been made to synthesize large-area single crystalline thin films directly on conductive substrates and apply defect engineering approaches to improve the surface properties. This review starts from a comprehensive introduction of the optoelectrical properties of perovskite single crystals. Then, the synthesis methods for high-quality bulk crystals and single-crystalline thin films are introduced and compared, followed by a systematic review of their optoelectronic applications including solar cells, photodetectors, and X-ray detectors. The challenges and strategical approaches for high-performance applications are summarized at the end with a brief outlook on future work.

Greater stability of low-dimensional halide perovskites as opposed to their three-dimensional counterparts, alongside their high extinction coefficient and thus excellent emission properties, have made them popular candidates for optoelectronic applications. Topological edges are found in two-dimensional perovskites that show distinct electronic properties. In this work, using Kelvin Probe Force Microscopy, performed on butylammonium lead bromide (BA2PbBr4) single crystals with optical bandgap of ~413 nm, we elucidate the electronic response of the edges and their potential impact on photodetector devices. We show that the charge-carriers are accumulated at the edges, increasing with the edge height. Wavelength-dependent surface photovoltage (SPV) measurements reveal that multiple sub-bandgap states exist in BA2PbBr4. As the edge height increases, the SPV amplitude at the edges reduces slightly more as compared to the adjacent regions, known as terraces, indicating relatively less reduction in band-bending at the surface due possibly to increased de-population of electrons from sub-bandgap states in the upper bandgap half. The existence of sub-bandgap states is further confirmed by the observation of below-bandgap emission (absorption) peaks characterised by spectral photoluminescence and photothermal deflection spectroscopy measurements. Finally, we fabricated a photodetector using a millimetre size BA2PbBr4 single crystal. Noticeable broadband photodetection response was observed in the sub-bandgap regions under green and red illumination, which is attributed to the existence of sub-bandgap states. Our observations suggest edge-height dependence of charge-carrier behaviour in BA2PbBr4 single crystals, a potential pathway that can be exploited for efficient broadband photodetector fabrication.

Dark septate endophytes (DSEs) are one of the most studied groups of root fungal endophytes in recent years. However, the effects of DSE on host plant are still under debate, and the molecular mechanisms are poorly understood. In this study, we identified a DSE fungus of the genus Anteaglonium, named T010, from the wild blueberry. When inoculated into Vaccinium corymbosum L. plants, T010 could enhance root growth and promote shoot branching, leading to increased plant growth. By comparative transcriptome analysis, we obtained 1948 regulated differentially expressed genes (DEGs) from the V. corymbosum plants treated by T010. Further functional enrichment analysis identified a series of DEGs enriched in transcriptional regulation, material transport, phytohormone biosynthesis and flavonoid biosynthesis. Moreover, the comparative analysis of liquid chromatography–mass spectrometry verified that T010 treatment induced the changes in the contents of various phytohormones and flavonoids. This is the first report on the isolation of DSE fungi of the genus Anteaglonium from blueberry roots. Moreover, our results suggested that T010 colonization could result in a series of changes in cell metabolism, biosynthesis and signal pathways, thereby promoting plant growth. Particularly, the changes of phytohormone and flavonoid metabolism induced by T010 colonization might contribute to the promotion of blueberry growth. Our results will provide new insights into understanding of the interaction of DSE fungi and host plants, as well as the development and utilization of DSE preparations.

The terahertz (THz)-wave absorption properties in organic-inorganic hybrid perovskite (OHP) materials are investigated with the in-depth development of OHP-based THz applications. In the THz range from 0.5 to 3 THz, OHPs typically show several interesting phonon modes such as transverse, longitudinal, and halogen self-vibrations. To modulate these frequencies, the density changes in defect-incorporated structures and element mixtures were tested and confirmed. In the literature, the origin of phonon modes in OHP materials have been mostly explained. However, we found new phonon vibration modes in formamidinium (FA)-based hybrid perovskite structures. FAPbI3 single crystals, organic–inorganic hybrid perovskites, of the δ-, δ/α-mixed-, and α-phases were prepared. We intriguingly found that the δ/α-mixed-phase exhibited significant THz-wave absorption peaks at 2.0 and 2.2 THz that were not related to any phonon modes from either the δ- or α-phases, although the δ/α-mixed-phase sample was confirmed to be formed by a physical combination of the δ- and α-phases without the creation of any new chemical states. Our theoretical study performed with ab initio calculations provides an explanation for these unusual THz-wave absorption behaviors; they originate from the novel vibration modes excited at the seamless interfaces in the mixed phase of FAPbI3.