Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs∕AZO∕p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

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Vertically aligned N-doped ZnO microrods with a hexagonal symmetry were fabricated via the chemical vapor transport with abundant N2O as both O and N precursors. We have demonstrated the suppression of the zinc interstitial-related shallow donor defects and have identified the zinc vacancy-related shallow and deep acceptor states by temperature variable photoluminescence in O-rich growth environment. Through spatially resolved cathodoluminescence spectra, we found the luminescent inhomogeneity in the sample with a core-shell structure. The deep acceptor-isolated VZn and the shallow acceptor VZn-related complex or clusters mainly distribute in the shell region.