Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithography (tc-SPL) with a flow-through reactive gas cell to achieve nanoscale control of defects in monolayer MoS 2. The tc-SPL produced defects can present either p-or n-type doping on demand, depending on the used gasses, allowing the realization of field effect transistors, and p-n junctions with precise sub-μm spatial control, and a rectification ratio of over 10 4. Doping and defects formation are elucidated by means of X-Ray photoelectron spectroscopy, scanning transmission electron microscopy, and density functional theory. We find that p-type doping in HCl/H 2 O atmosphere is related to the rearrangement of sulfur atoms, and the formation of protruding covalent S-S bonds on the surface. Alternatively, local heating MoS 2 in N 2 produces n-character.

The proliferation of van der Waals (vdW) heterostructures formed by stacking layered materials can accelerate scientific and technological advances. Here, we report a strategy for constructing vdW heterostructures through the interface engineering of the exfoliation substrate using a sub-5 nm polymeric film. Our construction method has two main features that distinguish it from existing techniques. First is the consistency of its exfoliation process in increasing the yield and in producing large (>10,000 μm 2) monolayer graphene. Second is the applicability of its layer transfer process to different layered materials without requiring a specialized stamp-a feature useful for generalizing the assembly process. We demonstrate vdW graphene devices with peak carrier mobility of 200,000 and 800,000 cm 2 V −1 s −1 at room temperature and 9 K, respectively. The simplicity of our construction method and its versatility to different layered materials may open doors for automating the fabrication process of vdW heterostructures.

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A suite of techniques was utilized to evaluate the correlation between biofilm physiology, fluid-induced shear stress, and detachment in hollow fiber membrane aerated bioreactors. Two monoculture species biofilms were grown on silicone fibers in a hollow fiber membrane aerated bioreactors (HfMBR) to assess detachment under laminar fluid flow conditions. Both physiology (biofilm thickness and roughness) and nutrient mass transport data indicated the presence of a steady state mature biofilm after 3 weeks of development. Surface shear stress proved to be an important parameter for predicting passive detachment for the two biofilms. The average shear stress at the surface of Nitrosomonas europaea biofilms (54.5 ± 3.2 mPa) was approximately 20% higher than for Pseudomonas aeruginosa biofilms (45.8 ± 7.7 mPa), resulting in higher biomass detachment. No significant difference in shear stress was measured between immature and mature biofilms of the same species. There was a significant difference in detached biomass for immature vs. mature biofilms in both species. However, there was no difference in detachment rate between the two species.