Abstract-The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF) at low operating frequencies relative to the MOSFET , which has limited its adoption notwithstanding its superior linearity, input matching, and stability compared to the inductively degenerated common-source LNA (CSLNA). A capacitor cross-coupled -boosting scheme is described that improves the NF and retains the advantages of the CGLNA topology. The technique also enables a significant reduction in current consumption. A fully integrated capacitor cross-coupled CGLNA implemented in 180-nm CMOS validates the -boosting technique. It achieves a measured NF of 3.0 dB at 6.0 GHz and consumes only 3.6 mA from 1.8 V; the measured input-referred third-order intercept (IIP3) value is 11.4 dBm. The capacitor cross-coupled -boosted CGLNA is attractive for low-power fully integrated applications in fine-line CMOS technologies.Index Terms-Common-gate amplifier, low-noise amplifier (LNA), noise figure (NF), RF integrated circuits.

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A common gate CMOS low noise amplifier (LNA) with an activeinductor load is presented. For large inductance values, an onchip passive inductor requires considerable silicon area and it is quality-factor (Q) limited; a situation that can be rendered as impractical. Hence, the purpose of this work is to seek the possibility of using active inductors in RF circuits as substitutes for passive ones. Moreover, an active inductor opens avenues for programmability, e.g. it is possible to attain an amplifier with a programmable center frequency. It is shown in this paper that by proper design optimization the active-inductor's noise contribution can be minimized. HSPICE simulations using 0 . 5~ HP technology show that our amplifier has a tuning range of half decade for a center frequency at 1GHz. The simulated gain, noise figure, and power consumption are 20dB, 3.65dB, and 14mW, respectively.

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