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Abstract-The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF) at low operating frequencies relative to the MOSFET , which has limited its adoption notwithstanding its superior linearity, input matching, and stability compared to the inductively degenerated common-source LNA (CSLNA). A capacitor cross-coupled -boosting scheme is described that improves the NF and retains the advantages of the CGLNA topology. The technique also enables a significant reduction in current consumption. A fully integrated capacitor cross-coupled CGLNA implemented in 180-nm CMOS validates the -boosting technique. It achieves a measured NF of 3.0 dB at 6.0 GHz and consumes only 3.6 mA from 1.8 V; the measured input-referred third-order intercept (IIP3) value is 11.4 dBm. The capacitor cross-coupled -boosted CGLNA is attractive for low-power fully integrated applications in fine-line CMOS technologies.Index Terms-Common-gate amplifier, low-noise amplifier (LNA), noise figure (NF), RF integrated circuits.

A fully-integrated common-gate UWB LNA employs a stagger-compensated series peaking technique to extend bandwidth, and a capacitor cross-coupled g m -boosting technique to reduce NF and power. A simple input matching scheme obviates the use of multiple inductors and complex filters. For two versions in 0.18 m CMOS, BW extension factors are 4.1X and 4.9X, -3dB bandwidths are 1.3-10.7GHz and 1.3-12.3GHz, NF are 4.4dB and 4.6dB, peak S 21 are 8.5dB and 8.2dB, and peak IIP3 are 8.3dBm and 9.1dBm, respectively. Each differential LNA draws 2.5mA from 1.8V.

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