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Recently the technological linear electron accelerators with the energy up to 10 and 25 MeV and the pulse current up to 1A have been developed and put into operation in the "Accelerator" R&D Production Establishment of the National Science Center, Kharkov Institute of Physics and Technology [1]. The zone of the technological object irradiation by the accelerated electrons is created by the magnetic scanning system. Wide-aperture (50 x 200mm) magneto-induction position monitor has been designed to control the electron beam position. Signals from the monitor are used in the accelerator control system.

It is demonstrated that the mobility and number fluctuations in an n-channel metal oxide semiconductor field effect transistor (n-MOSFET), which has a shallow-doped channel, can be separately measured. The mobility fluctuation becomes the dominant source of noise in the case where a negative gate voltage is applied. This is because carriers are not near the Si/SiO interface. If a positive gate voltage is applied to the MOSFET, carriers exist near the Si/SiO interface, so that noise due to the number fluctuation becomes dominant.

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