The review concerns the fundamentals of spintronics (spin transport electronics). The material covers spin spin interactions and spin relaxation in semiconductors as well as spin and spin injection related effects in the condensed matter. Examples of promising spintronic de vices are given, requirements for spintronic materials are formulated, methods of synthesis of spintronic materials are described, and the physicochemical properties of some materials are characterized. Organic spintronic materials are briefly outlined and the state of the art in the field of research on inhomogeneous magnetic semiconducting materials possessing high tem perature ferromagnetism is described. The emphasis is placed on the chemical bonding and electronic structure of magnetic impurities in semiconductors, consideration of the nature of ferromagnetism, and on the character of exchange interactions between localized spins in novel spintronic materials.

Spatially nonhomogeneously spin polarized nuclei are proposed as a new mechanism to monitor electron states in a nanostructure, or as a means to createn and, if necessary, reshape such nanostructures in the course of the experiment. We found that a polarization of nulear spins may lift the spin polarization of the electron states in a nanostructure and, if sufficiently strong, leads to a polarization of the electron spins. Polarized nuclear spins may form an energy landscape capable of binding electrons with energy up to several meV and the localization radius > 100Å.

Most of the existing theories of FM in III-V DMS are based on semi-phenomenological models, which postulate the existence of local magnetic moments on the Mn sites, indirect exchange between these moments and holes in the valence band of the host crystals (see, e.g. [3]) and sometimes emphasizes the role of shallow acceptor levels [4]. In this paper we present a microscopic model, which takes into account the origin of localized magnetic moments and shallow acceptor levels induced by the Mn impurity and derive the effective

The kinematical mechanism of superconductivity is applied to the Emery-Hirsch model for the CuO 2 and BiO 3 layers. A superconducting region due to strong kinematic interaction of p- and s, d-electrons are determined as a function of np and ns,d-degrees of non-filling of 2p6, 6s2, 3d10 shells of O 2−, Bi 3+, Cu +. The T c is calculated taking into account the spin flip relaxation time. Magnetostatic properties of a superconducting state in a weak magnetic field are investigated. Coefficients of the Ginzburg-Landau equation are calculated. The ground state energy of the Emery-Hirsch model is also calculated.