Using the methods of Auger electron and photoelectron spectroscopy and light absorption spectroscopy, the composition, densities of state of electrons in the valence band, and parameters of the energy bands of Ge (111) implanted with Na+ ions with an energy of E0 = 0.5 keV at a dose of D = Dsat = 6·1016 cm-2 and a thin layer of NaGe2 obtained by heating ion-implanted Ge. It is shown that a narrow n-type band (~0.2 eV) appears in the Ge valence electron spectrum after ion implantation near the bottom of the conduction band, which is explained by the presence of a large number of unbound Na atoms in the ion-doped layer. NaGe2 nanofilms with a band gap of ~0.45 eV was obtained for the first time by heating ion-implanted Ge.

Методом бомбардировки ионами Ar+ с последующим отжигом на различных глубинах оксида кремния получены нанофазы и нанослои Si. При изменении энергии ионов E0 от 10 до 25 keV средняя глубина образования нанофаз Si меняется в пределах от 15 до 25 nm. Показано, что при изменении размеров нанофаз Si от ~ 10 до 25 nm ширина запрещенной зоны Eg уменьшается от 1.9 до 1.5 eV. Для нанослоев Si Eg составляет ~ 1.1-1.2 eV. Ключевые слова: гетероструктура, ионная бомбардировка, нанослой, поглощение света, степень покрытия.

The effect of the adsorption of Ba atoms with a thickness of  ≤ 3 - 4 monolayers and the implantation of Ba+ ions with an energy of E0 = 0.5 - 2 keV on the density of states of electrons in the valence band, the parameters of the energy bands, and the emission and optical properties of Ge (111) has been studied for the first time. It is shown that during the adsorption of Ba atoms with  = 1 monolayer, the value of the thermoelectric work function  decreases by  1.9 eV, and the value of the secondary electron emission coefficient квантовm and the quantum yield of photoelectrons Y increases by 1.5 - 2 times. In the case of implantation of Ba+ ions with E0 = 0.5 keV at an irradiation dose D = 61016 cm-2, the density of state of valence electrons and the parameters of the energy bands change sharply; the quantum yield of photoelectrons increases by a factor of 2 or more. The observed changes are explained by the formation on the surface of a thin ( 25 - 30 Å) amorphous doped layer consisting of nanoscale phases of the Ba - Ge type ( 60 - 65 at.%) And excess (unbound) Ba and Ge atoms. In this case, the band gap Eg decreases by  0.3 eV.